Calculation of the electron-transfer parameters of thin polycrystalline films of metals

Electron transfer parametrs (scattering coefficient R, crystal-boundary transmission coefficient r, film-surface reflection coefficient) are calculated at temperatues t_msm=120, 293, and 573 K using Sc and Re films as an example. The conditions L d and L < d are satisfied, respectively, for these films (L is the mean diameter of the crystals and d is the thickness of the specimens). The films were obtained in a vacuum of 10^–6-5·10^–7 Pa. In the thickness ranges d200–500 Å (Re) and 300–800 Å (Sc), the films had a mean crystallite size of 250 and 600 Å, respectively. Experimental data on the dimensional effect of the temperature coefficient of resistance was analyzed within the framework of the Mayadas-Shatzkes (MS) theory, the model of isotropic carrier scattering, and the three-dimensional Tellier-Tosser-Pichard (TTP) model. It was concluded that the electrophysical properties of Sc films are satisfactorily described by the TTP model, while the MS theory yields exaggerated values of the coefficients r and p. In the case of films of Re, use was made of the isotropic scattering model and an approximation of the three-dimensional model for polycrystalline films. It was found that the coefficients r and R are independent of temperature.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 42–47, June, 1988.We thank V. B. Lobode and L. G. Kulemzina for their assistance in conducting the investigation.