Effect of hydrogenation on the metal-semiconductor phase transition in vanadium dioxide thin films |
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| Authors: | V. N. Andreev V. M. Kapralova V. A. Klimov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) St. Petersburg State Polytechnical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia |
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| Abstract: | Hydrogen penetration into thin films of vanadium dioxide from aqueous solutions of mono-, di-, and tribasic alcohols is studied. It is shown that this process is reversible, has a catalytic character, and brings about a lowering of the metal-semiconductor phase transition temperature. It is established that the phase transition in a hydrogenated HxVO2 film is completely suppressed for x> 0.04. |
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