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| 化学机械抛光对铜互连器件的影响及失效分析 | |
| 引用本文： | 林晓玲,刘建,章晓文,侯通贤,姚若河.化学机械抛光对铜互连器件的影响及失效分析[J].微电子学,2011,41(1). |
| 作者姓名： | 林晓玲 刘建 章晓文 侯通贤 姚若河 |
| 作者单位： | 1. 华南理工大学电子与信息学院微电子研究所,广州,510640;电子元器件可靠性物理及其应用技术国家级重点实验室,工业和信息化部电子第五研究所,广州,510610 2. 电子元器件可靠性物理及其应用技术国家级重点实验室,工业和信息化部电子第五研究所,广州,510610 3. 华南理工大学电子与信息学院微电子研究所,广州,510640 |
| 基金项目： | 电子元器件可靠性物理及其应用技术国家级重点实验室基金 |
| 摘 要： | 探讨了Cu化学机械抛光(CMP)工艺引起Cu互连器件失效的原因以及对可靠性的影响,对Cu CMP工艺缺陷导致器件失效的案例进行分析.由于CMP的技术特点,不可避免地会产生一些工艺缺陷和工艺误差,从而引起器件失效.必须根据标准要求,出厂或封装前对圆片进行芯片功能参数测试和严格的镜检,以便在封装前剔除存在潜在工艺缺陷的芯片,达到既定可靠性要求. |
| 关 键 词： | 化学机械抛光 Cu互连 工艺缺陷 金属残留 |
Effect of CMP on Reliability of Cu Interconnect Devices and Related Failure Analysis |
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| LIN Xiaoling,LIU Jian,Zhang Xiaowen,HOU Tongxian,YAO Ruohe.Effect of CMP on Reliability of Cu Interconnect Devices and Related Failure Analysis[J].Microelectronics,2011,41(1). | |
| Authors: | LIN Xiaoling LIU Jian Zhang Xiaowen HOU Tongxian YAO Ruohe |
| Institution: | LIN Xiaoling1,2,LIU Jian2,Zhang Xiaowen2,HOU Tongxian1,YAO Ruohe1 (1.Institute of Microelectronics,School of Electronic and Information Engineering,South China Universityof Technology,Guangzhou 510640,P.R.China,2.National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component,China Electronic Product Reliability and Environmental Testing Research Institute,P.R.China) |
| Abstract: | Mechanism of CMP caused failure in Cu interconnect device was analyzed,and its effect on reliability of the device was investigated.As an example,device failure caused by Cu CMP process defect was analyzed.Due to its technical characteristics,Cu CMP process would inevitably have some defects or errors,which might cause device failure.Therefore,functional parameter test and rigorous microscopic examination should be carried out strictly on the wafer before packaging according to relevant standards,to screen ... |
| Keywords: | Chemical mechanical polishing(CMP) Cu interconnect Process defect Metal residue |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |