Ultraviolet laser removal of small metallic particles from silicon wafers

Laser removal of small 1 μm sized copper, gold and tungsten particles from silicon wafer surfaces was carried out using ultraviolet radiation at 266 nm generated by Nd:YAG harmonic generation. Successful removal of both copper and gold particles from the surface was achieved whereas tungsten particles proved to be difficult to remove. The cleaning efficiency was increased with an increase of laser fluence. The optimum processing window for safe cleaning of the surface without any substrate damage was determined by measuring the damage threshold laser fluence on the silicon substrate and the required fluence for complete removal of the particles. The different cleaning efficiencies with particle type are discussed by considering the adhesion force of the particle on the surface and the laser-induced cleaning force for the three different particles.