Temperature dependence of dark current-voltage characteristics of nInSb-nPbTe-nCdTe isotype structure |
| |
| Authors: | K. E. Avjyan G. H. Vardanyan A. M. Khachatryan |
| |
| Affiliation: | (1) Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak, Armenia |
| |
| Abstract: | The temperature dependence of dark current-voltage characteristics of an nInSb-nPbTe-nCdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different temperature dependences of electron concentrations in nInSb and nPbTe. |
| |
| Keywords: | nInSb-nPbTe-nCdTe structure current-voltage characteristics temperature dependence |
| 本文献已被 SpringerLink 等数据库收录！ |
