Temperature dependence of dark current-voltage characteristics of nInSb-nPbTe-nCdTe isotype structure |
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Authors: | K. E. Avjyan G. H. Vardanyan A. M. Khachatryan |
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Affiliation: | (1) Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak, Armenia |
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Abstract: | The temperature dependence of dark current-voltage characteristics of an nInSb-nPbTe-nCdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different temperature dependences of electron concentrations in nInSb and nPbTe. |
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Keywords: | nInSb-nPbTe-nCdTe structure current-voltage characteristics temperature dependence |
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