Temperature dependence of dark current-voltage characteristics of <Emphasis Type="Italic">n</Emphasis>InSb-<Emphasis Type="Italic">n</Emphasis>PbTe-<Emphasis Type="Italic">n</Emphasis>CdTe isotype structure |
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| Authors: | K E Avjyan G H Vardanyan A M Khachatryan |
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| Institution: | (1) Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak, Armenia |
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| Abstract: | The temperature dependence of dark current-voltage characteristics of an nInSb-nPbTe-nCdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different temperature dependences of electron concentrations in nInSb and nPbTe. |
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| Keywords: | nInSb-nPbTe-nCdTe structure current-voltage characteristics temperature dependence |
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