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Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states |
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| Authors: | A A Ionin S I Kudryashov S V Makarov N N Mel’nik A A Rudenko P N Saltuganov L V Seleznev D V Sinitsyn I A Timkin R A Khmelnitskiy |
| Institution: | 1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia 2. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh. 31, Moscow, 115409, Russia 3. National Research University MFTI, Institutskii per. 9, Dolgoprudnyi, Moscow region, 141700, Russia |
| Abstract: | Inhomogeneous hyperdoping of a 100-nm-thick silicon surface layer with sulfur atoms at concentrations above 2 × 1021 cm?3 was obtained via its femtosecond laser ablation in a sulfur-containing organic solvent. Infrared transmission spectroscopy reveals distinct interband absorption peaks of donor sulfur states, which are absent in the initial crystalline silicon, and a broad absorption band of free carriers with a concentration of ～1018 cm?3. The rather low free-carrier concentration is related to equilibrium room-temperature ionization of localized donor sulfur states, preserving their nondegenerate character owing to the strong electronion binding in the donor states. |
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