Terahertz oscillations in semiconducting carbon nanotube resonant-tunneling diodes |
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| Authors: | D Dragoman M Dragoman |
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| Institution: | a Physics Department, Solid State Chair, University of Bucharest, P.O. Box MG-11, 76900 Bucharest, Romania;b National Institute for Research and Development in Microtechnology (IMT), P.O. Box 38-160, 72225 Bucharest, Romania |
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| Abstract: | The paper presents the simulation and possible physical implementation of a resonant tunneling diode based on a semiconducting single-walled carbon nanotube, which exceeds the performance of similar resonant tunneling devices based on semiconductor heterostructures. In this respect, the oscillation frequency and the output power are predicted to be greater by one order of magnitude, attaining 16 THz and 2.5 μW, respectively. The generated THz signal is directly radiated into free-space through the injection contacts of the resonant tunneling diode, which have the shape of a bowtie antenna. |
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| Keywords: | Terahertz fields Carbon nanotube devices Resonant tunneling |
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