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Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot |
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| Authors: | Yu N Khanin E E Vdovin L Eaves I A Larkin A Patane O N Makarovski? M Henini |
| Institution: | (1) Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(2) The School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK |
| Abstract: | The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter. |
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