Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser |
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| Authors: | S.Y. Cheng Y.G. Wang Jau Tang L. Zhang L. Sun X.C. Lin J.M. Li |
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| Affiliation: | 1. Research Center for Applied Sciences, Academia Sinica, Taiwan;2. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China |
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| Abstract: | The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350 fs. The saturation intensity of the absorber was found to be 115 μJ/cm2 at 1060 nm. The modulation depth of the absorber could be about 7%. Passive mode-locked Nd:YVO4 laser using this kind of absorber was demonstrated. The largest average output power of the mode-locked laser is 1.4 W at the pump power of 7.8 W. The continuous wave mode-locked pulses with the repetition of 80 MHz were achieved. |
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