Optical properties of GaAs/Ga 1-xAlxAs ridge quantum wire: Third-harmonic generation |
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| Authors: | R Khordad B Mirhosseini |
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| Institution: | 1. Faculty of Education, Department of Mathematical and Natural Science Education, Cumhuriyet University, 58140, Sivas, Turkey;2. Faculty of Technology, Department of Optical Engineering, Cumhuriyet University, 58140, Sivas, Turkey;3. Faculty of Science, Department of Physics, Dokuz Eylül University, 35160, Buca, ?zmir, Turkey;1. Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan, Armenia;2. Department of Medical Physics, Yerevan State Medical University, 2 Koryun Street, 0025 Yerevan, Armenia;3. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;4. Department of Physics, “Politehnica” University of Bucharest, 313 Splaiul Independen?ei, Bucharest RO-060042, Romania |
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| Abstract: | In this paper, the third-harmonic generation (THG) in GaAs/Ga1 ? xAlxAs ridge quantum wires is studied in detail. An analytic expression for the THG is obtained using a compact density matrix approach and an iterative procedure. Numerical calculations are performed for the typical GaAs/Ga1 ? xAlxAs ridge quantum wire. The results show that the maximum THG over 10? 9? m2?/V2? can be obtained. Another important point is that the structural parameters have great influence on the THG in this system. |
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