Influence of the antireflection,window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules |
| |
| Authors: | Jing Zhao Benkang Chang Yajuan Xiong Junju Zhang Yijun Zhang |
| |
| Affiliation: | 1. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China;2. National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, PR China;3. Academy of Shenzhen Guohua Optoelectronics, Shenzhen 518110, PR China;1. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia;2. Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu, Estonia |
| |
| Abstract: | In order to well study the influence of the thickness and doping concentration on optical properties of transmission-mode GaAs photocathode, three exponential-doping and one uniform-doping photocathode modules were prepared by molecular beam epitaxy with a structure of glass/Si3N4/Ga1 ? xAlxAs/GaAs. By use of the spectrophotometer, the optical properties were separately measured including the reflectivity and transmissivity curves. Based on thin film optical principles, the optical properties and their integral values are calculated by matrix formula for the four-layer photocathode module. The result shows that the antireflection and window layers affect the peak and valley of the optical property curves and the active layer influences the absorptivity values of the transmission-mode cathode modules. The photocathode module has high absorptivity within the response waveband when the optimal module has the Si3N4 antireflection layer of 0.1 μm, the Ga1 ? xAlxAs window layer of more than 0.4 μm, and the GaAs active layer of 1.5 μm–2 μm and low average doping concentration. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
