AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications |
| |
Authors: | Priyanka Malik RS Gupta Rishu Chaujar Mridula Gupta |
| |
Institution: | 1. Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, Dhaula Kuan, New Delhi 110 021, India;2. Department of Electronics & Communication Engineering, Maharaja Agrasen Institute of Technology, Sector-22, Rohini, Delhi 110 086, India;3. Department of Applied Physics, Delhi Technological University, Sector-17, Rohini, Bawana Road, Delhi 110 042, India |
| |
Abstract: | In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET and Rectangle Recessed Channel (RRC) MOSFET, using device simulators; ATLAS and DEVEDIT. Further, the impact of technology parameter variations in terms of negative junction depth (NJD), gate metal workfunction difference, substrate doping (NA) and corner angle, on GME-TRC MOSFET has also been evaluated. The simulation study shows the increase in transconductance and decrease in parasitic capacitance, which further contributes towards a significant improvement in cut-off frequency (ft) in GME-TRC MOSFET as compared to conventional TRC and RRC MOSFETs. Moreover, the significant enhancement in maximum available power gain (Gma), maximum transducer power gain (GMT), maximum unilateral power gain (MUG), maximum frequency of oscillation (fMAX) and stern stability factor (K) have also been observed for GME-TRC MOSFET due to reduced short channel effects (SCEs) and enhanced current driving capabilities. Further, the experimental data for grooved gate MOSFET has also been verified with the simulated data and a good agreement between their results is obtained. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|