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Measurement of surface resistivity and surface conductivity of anodised aluminium by optical interferometry techniques
Authors:Khaled Habib
Institution:Materials Science Lab., Department of Advanced Systems, KISR, P.O. Box 24885, 13109 Safat, Kuwait
Abstract:Optical interferometry techniques were used for the first time to measure the surface resistivity and surface conductivity of anodised aluminium samples in aqueous solution, without any physical contact. The anodization process (oxidation) of the aluminium samples was carried out in different sulphuric acid solutions (1.0–2.5% H2SO4), by the technique of electrochemical impedance spectroscopy (EIS), at room temperature. In the mean time, the real-time holographic interferometric was carried out to measure the thickness of anodised (oxide) film of the aluminium samples during the anodization process. Then, the alternating current (AC) impedance (resistance) of the anodised aluminium samples was determined by the technique of electrochemical impedance spectroscopy (EIS) in different sulphuric acid solutions (1.0–2.5% H2SO4) at room temperature. In addition, a mathematical model was derived in order to correlate between the AC impedance (resistance) and to the surface (orthogonal) displacement of the samples in solutions. In other words, a proportionality constant (surface resistivity or surface conductivity=1/surface resistivity) between the determined AC impedance (by EIS technique) and the orthogonal displacement (by the optical interferometry techniques) was obtained. Consequently the surface resistivity (ρ) and surface conductivity (σ) of the aluminium samples in solutions were obtained. Also, electrical resistivity values (ρ) from other source were used for comparison sake with the calculated values of this investigation. This study revealed that the measured values of the resistivity for the anodised aluminium samples were 2.8×109, 7×1012, 2.5×1013, and 1.4×1012  Ω cm in 1.0%, 1.5%, 2.0%, and 2.5% H2SO4 solutions, respectively. In fact, the determined value range of the resistivity is in a good agreement with the one found in literature for the aluminium oxide, 85% Al2O3 (5×1010 Ω cm in air at temperature 30 °C), 96% Al2O3 (1×1014  Ω cm in air at temperature 30 °C), and 99.7% Al2O3 (>1×1014 Ω cm in air at temperature 30 °C).
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