Enhancing the photoluminescence intensity of silicon-rich nitride film by localized surface plasmon enhanced photo-excitation |
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| Authors: | Peihong Cheng Dongsheng Li Min Xie Deren Yang Jilong Bao |
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| Institution: | 1. School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315016, People''s Republic of China;2. State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People''s Republic of China;1. Department of Electronics & Communication Engineering, Rajalakshmi Engineering College, Chennai 602105, India;2. Department of Electronics Engineering, MIT Campus, Anna University, Chennai 600044, India;3. Department of Electronics & Communication Engineering, Sri Venkateswara College of Engineering, Chennai 602117, India;1. Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China;2. Department of Light Sources and Illuminating Engineering, Engineering Research Center of Advanced Lighting Technology (MoE), and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China;1. Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey;2. Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey;3. Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey;4. UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey;5. Department of Energy Engineering, Faculty of Engineering, Ankara University, 06830 Ankara, Turkey;6. Department of Physics, Bilkent University, 06800 Ankara, Turkey;1. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;2. Key Lab for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084, China |
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| Abstract: | The photoluminescence of silicon-rich nitride (SRN) film was coupled with the surface plasmon (SP) of Ag island film. It shows that the photoluminescence (PL) enhancement or quenching is strongly dependent on the excitation wavelength. When the excitation wavelength is near the SP resonance spectral region, the Ag islands act as a photo antenna, leading to the enhancement of the excitation cross-sections and therefore the photoemission enhancement. Furthermore, it is demonstrated that the metal island size also has an influence on the emission enhancement, but the enhancement is much more decided by the excitation wavelength than by the Ag island radiative scattering. |
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