Topological,morphological and optical properties of Gamma irradiated Ni (II) tetraphenyl porphyrin thin films |
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| Authors: | MM El-Nahass HM Abd El-Khalek Ahmed M Nawar |
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| Institution: | 1. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Heliopolis, Roxy, Cairo, Egypt;2. Thin Film Laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia, Egypt;1. UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria, South Africa;2. ETH Zurich, Swiss Federal Institute of Technology, CH-8057, Zurich, Switzerland;3. iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province, South Africa;4. Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf, Switzerland;5. Institut National de la Recherche Scientifique (INRS),1650 Blvd. Lionel-Boulet, Varennes, Québec J3X1S2, Canada;6. Department of Electrical, Electronics and Computer Engineering, French South African Institute of Technology/Cape Peninsula University of Technology, Bellville campus, PO Box 1906, Bellville, 7530, South Africa;1. University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India;1. Laser and Nonlinear Optics Laboratory, Department of Physics, National Institute of Technology Calicut, Kozhikode, Kerala, 673601, India;2. Theoretical and Computational Laboratory, Department of Chemistry, National Institute of Technology Calicut, Kozhikode, Kerala, 673601, India;3. Bioinorganic Materials Research Laboratory, Department of Chemistry, National Institute of Technology Calicut, Kozhikode, Kerala, 673 601, India |
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| Abstract: | Thermal evaporation technique was used to prepare NiTPP Thin films at room temperature. The prepared films were divided into two groups; the first group was as-deposited films, and the second group was irradiated in gamma cell type 60Co source at room temperature with total absorbed dose of 150 kGy in air. All films were identified by X-ray diffraction (XRD), Fourier-transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) before and after exposed to gamma radiation. The spectrophotometric measurement of transmittance and reflectance were used to investigate the optical properties at normal incidence of light in the wavelength range 200–2500 nm for as-deposited and gamma-irradiated films. Optical constants (refractive index n, and absorption index k) of as-deposited and irradiated films have been obtained in the wavelength range 200–2500 nm for all the samples. The single oscillator energy (Eo), the dispersion energy (Ed), the high frequency dielectric constant (ε∞), the lattice dielectric constant (εL) and the ratio of the free charge carrier concentration to the effective mass (N/m?) were estimated for each group. The absorption analysis has been also performed to determine the type of electronic transition and the optical energy gap. |
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