首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Quasi-soliton propagation in dispersion-engineered silicon nanowires
Authors:DC Zografopoulos  R Beccherelli  EE Kriezis
Institution:1. Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Roma 00133, Italy;2. Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki, Thessaloniki GR-54124, Greece;1. Department of Physics, Technical University Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba, Czech Republic;2. Laboratory of Optical Fibre Technology, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 3, 20-031 Lublin, Poland;1. DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark;2. NKT Photonics A/S, Blokken 84, DK-3460 Birkerød, Denmark;1. Department of Physics, Pondicherry University, Puducherry 605 014, India;2. Department of Physics, Central University of Tamil Nadu, Thiruvarur, India;1. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China;2. Department of Applied Mathematics, University of Washington, Seattle, USA;3. Photonics Research Center, Department of Electronic and Information Engineering,The Hong Kong Polytechnic University, Hong Kong
Abstract:Soliton-like propagation of ultra-short pulses in dispersion-engineered silicon photonic wires is theoretically investigated via the nonlinear Schrödinger equation. It is shown that by proper patterning of silicon waveguides, the engineering of group velocity dispersion can effectively compensate for both linear and two-photon absorption-induced nonlinear losses. Quasi-soliton propagation is demonstrated for 100-fs pulses over large propagation lengths for a realistic silicon wire of optimally patterned waveguide width.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号