Thermal modeling of GaAs-based semiconductor disk lasers |
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| Authors: | Peng Zhang Yan Rong Song Yan Bin Men Te Li Dai Yi Ping Liang Si Qiang Fan |
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| Institution: | 1. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;2. Chongqing High-Education Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 400047, China;3. College of Applied Sciences, Beijing University of Technology, Beijing 100124, China;4. College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China |
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| Abstract: | Thermal characteristics including the temperature, the heat flux, and the temperature gradient of GaAs-based semiconductor disk lasers (SDLs) under various conditions are modeled using the finite element method. The effects of the substrate thickness, the pump spot radius, the heatspreader, and the pump power on the thermal properties of laser are simulated, and the maximum temperature rise in active region is highlighted. Numerical analysis predicts that SiC is an ideal substitute for diamond as a heatspreader. Instead of the sophisticated completely-etched substrate, the use of a high-thermal-conductivity heatspreader along with partly-etched substrate can provide sufficient thermal management to the laser. |
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