Physical noise model of a uniformly doped nanoscale FinFET photodetector

The noise mechanisms of a uniformly doped nanoscale FinFET photodetector including quantum mechanical effects is investigated theoretically. A numerical model has been developed for computation of different noise components in nanoscale FinFET. The drain current channel thermal noise under illuminated conditions is calculated. The noise parameters of the nanoscale FinFET equivalent circuit are strongly influenced by the incident optical signal and the quantum mechanical effects are found to play a major role in determining the overall noise performance of the device. It also reveals that the operating frequency can be adjusted suitably to make the noise behavior independent of the incident optical power. Other noise components such as Shot noise, thermal noise and diffusion noise have been calculated for the two port FinFET photodetector. Signal-to-noise ratio (SNR), Bit error rate (BER) and noise equivalent power (NEP) has also been calculated.