Intensity of intersubband electron scattering by polar optical phonons in semiconductor quantum wires with account of energy level broadening

An approach describing the effect of energy level broadening in semiconductor quantum wires on the intensity of intersubband electron scattering by polar optical phonons is suggested. As a broadening mechanism, scattering by atomic thermal vibrations and by the roughness of the confining surfaces of a quantum system is considered. It is shown that in this case the dependence of the intensity of intersubband scattering of electrons on their kinetic energy has no singularities.