CW CO2-laser annealing of arsenic implanted silicon |
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Authors: | M. Takai P. H. Tsien S. C. Tsou D. Röschenthaler M. Ramin H. Ryssel I. Ruge |
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Affiliation: | 1. Fraunhofer-Institut für Festk?rpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. Germany
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Abstract: | CW CO2-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm−2 for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm−2 and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×1015 cm−2 was obtained for 1×1016 cm−2 implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min. |
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Keywords: | 79.20 Ds 81.40 Ef 61.70. Tm |
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