拓扑绝缘体薄膜和有限尺寸效应

拓扑绝缘体是近年来发现的一类新的量子材料，已成为凝聚态物理的研究热点领域.厚度仅几纳米的拓扑绝缘体薄膜不但具有奇特的物理性质，而且还是拓扑绝缘体应用于平面器件的基础.文章以Bi2Se3为例，介绍了Bi2Se3家族拓扑绝缘体薄膜的分子束外延生长以及其能带、自旋结构和拓扑性质随层厚的演化.这些结果为人工调控拓扑绝缘体的电子结构和物理性质提供了指导.

Topological insulator thin films and finite size effects

Topological insulators (TIs) are a new class of quantum matter which have attracted extensive interest recently. Nanometer thick TI thin films not only exhibit novel physical properties but also are useful for developing TI-based planar devices. Taking Bi2Se3 as an example, we report the molecular beam epitaxy growth of the Bi2Se3 family of TI thin films and the thickness dependent behavior of their band and spin structures and topological characteristics. The results provide information on the artificial control of the electronic structures and physical properties of TIs.