Air-stable,non-volatile resistive memory based on hybrid organic/inorganic nanocomposites |
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| Affiliation: | 1. University of Cagliari, Dept. of Electrical and Electronic Engineering, Piazza D’Armi, 09123 Cagliari, Italy;2. CNR – Institute of Nanoscience, S3 Centre, Via Campi 213A, 41100 Modena, Italy;3. University of Namur, Research Center in Physics of Matter and Radiation (PMR), Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), rue de Bruxelles 61, B-5000 Namur, Belgium;4. University of Lodz, Department of Materials Technology and Chemistry, Pomorska St. 163, 90-236 Lodz, Poland;5. Central European Institute of Technology, Masaryk University, Kamenice 5, CZ-62500 Brno, Czech Republic;6. Institute of Applied Physics, Eberhard-Karls-Universität Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen, Germany;1. POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;2. Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;3. Department of Polymer Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;4. Department of Nano, Medical and Polymer Materials, Yeungnam University, Gyeongsan 712-749, Republic of Korea;1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China;2. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;3. University of Chinese Academy of Sciences, Beijing 100039, PR China;1. School of Chemical Engineering and Material Science, Chung-Ang University, Seoul 156-756, South Korea;2. Energy Nano Materials Research Center, Korea Electronics Technology Institute (KETI), Seongnam 463-816, South Korea;1. Department of Chemistry, Shantou University, Guangdong 515063, China;2. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region;3. Department of Chemistry, South University of Science and Technology of China, Shenzhen 518055, China;4. 4/F R&D Building, Skyworth Science Park, Tangtou Industrial Zone, Shiyan Town, Baoan District, Shenzhen, China;1. Department of Physics and Astronomy, London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, UK;2. Istituto per la Sintesi Organica e la Fotoreattività, Centro Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna 40129, Italy;3. BASF SE, Carbon Materials Innovation Center, Ludwigshafen 67056, Germany |
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| Abstract: | A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching. |
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| Keywords: | Organic memories Resistive switching Metal nanoparticles Filamentary conduction |
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