First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices |
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| Authors: | F Tair N Sekkal B Amrani W Adli L Boudaoud |
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| Institution: | 1. Département de physique, Université des Sciences et Technologie Mohamed Boudiaf d’Oran, 31000, Oran, Algeria;2. Département de Physique-Chimie, Ecole Normale Supérieure de l’Enseignement Technique, BP 1523, El M’Naouer, 31000 Oran, Algeria;3. Computational Materials Science Laboratory, Département de Physique, Institut de Sciences Exactes, Université de Sidi Bel Abbès, 22000 Sidi Bel Abbès, Algeria;4. Physia-Laboratory, BP 47 (RP), 22000 Sidi Bel Abbès, Algeria;5. Laboratoire de Traitement de Surface et Sciences des Matériaux, Département de Physique, Faculté des Sciences, Université des Sciences et de la Technologie d’Oran (U.S.T.O.), Oran 31000, Algeria |
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| Abstract: | Using two versions of the first principles full potential linear muffin-tin orbitals method (FPLMTO) which enable an accurate treatment of the interstitial regions, the electronic and optical properties of (110) growth axis Si/SiGe superlattices are investigated. A comparative study with (001) growth axis superlattices is made. In particular, it is found that the bottom of the conduction band (CB) is closer to Γ in the (110) system but the optical activity is not enhanced. Furthermore, the absorption spectra of the superlattices are calculated and are found to be quite different from those of bulk Si and Ge but fairly close to their average. |
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| Keywords: | Si/SiGe systems Si SiGe 110 Growth axis Superlattice Quantum well Electronic structure Optical properties |
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