Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure |
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Authors: | Wensheng Wei Tianmin Wang Yuliang He |
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Institution: | 1. School of Physics and Electronic Information, Wenzhou University, Wenzhou, Zhejiang Province, 325027, China;2. Center of Material Physics and Chemistry, School of Science, Beihang University (BUAA), Beijing 100083, China;3. Department of Physics, Nanjing University, Nanjing 210093, China |
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Abstract: | A heterostructure of n-type hydrogenated nanocrystalline silicon (nc-Si:H) film with p-type crystalline silicon, i.e., (n)nc-Si:H/(p)C-Si, was fabricated to investigate carrier characteristics and transport. After electrical experiments, carrier information, such as hole and electron as well as 2-dimension electronic gas in the studied system, was identified respectively. The forward current conduction was analyzed while the reverse current transport was distinguished as different mechanisms within the different range of negative applied voltage. The performed study also leads us to ascribe the main origin of short transient times on the produced structure to a tunneling mechanism. |
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Keywords: | Nanocrystalline silicon Heterostructure 2-dimension electron gas Carrier transport |
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