Quantum diffusion of muonium in GaAs |
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| Authors: | R. Kadono R. F. Kiefl J. H. Brewer G. M. Luke T. Pfiz T. M. Riseman B. J. Sternlieb |
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| Affiliation: | (1) TRIUMF, V6T 2A3 Vancouver, British Columbia, Canada;(2) Department of Physics, University of British Columbia, V6T 2A6 Vancouver, British Columbia, Canada;(3) Department of Physics, Columbia University, 10027 New York, NY, USA;(4) Present address: Institute of Physical and Chemical Research, 351-01 Wako, Saitama, Japan |
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| Abstract: | The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT 1 relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 1010 s−1 (corresponding diffusion constantD≈10−6 cm2s−1) at lower temperatures as well as at room temperature. |
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