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Scanning photoemission spectromicroscopic study of 4-nm ultrathin SiO(3.4) protrusions probe-induced on the native SiO(2) layer
Authors:Devan Rupesh S  Gao Shun-Yu  Lin Yu-Rong  Cheng Shun-Rong  Hsu Chia-Er  Chen Chia-Hao  Shiu Hung-Wei  Liou Yung  Ma Yuan-Ron
Institution:Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China.
Abstract:Atomic force microscopy probe-induced large-area ultrathin SiO(x) (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO(2) layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiO(x) protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiO(x) protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si(4+), Si(3+), Si(2+), and Si(1+) species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiO(x) protrusions.
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