Scanning photoemission spectromicroscopic study of 4-nm ultrathin SiO(3.4) protrusions probe-induced on the native SiO(2) layer |
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Authors: | Devan Rupesh S Gao Shun-Yu Lin Yu-Rong Cheng Shun-Rong Hsu Chia-Er Chen Chia-Hao Shiu Hung-Wei Liou Yung Ma Yuan-Ron |
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Institution: | Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China. |
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Abstract: | Atomic force microscopy probe-induced large-area ultrathin SiO(x) (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO(2) layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiO(x) protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiO(x) protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si(4+), Si(3+), Si(2+), and Si(1+) species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiO(x) protrusions. |
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