Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications |
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Authors: | A El Fatimy JC Delagnes E Nguema W Knap P Mounaix |
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Institution: | a Université Bordeaux 1 and CNRS, CPMOH, UMR 5798, 351 Cours de la Libération, 33405 Talence cedex, France b Université Montpellier 2 and CNRS, GES, UMR 5650, Place E. Bataillon, 34095 Montpellier, France |
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Abstract: | The possibility of using plasma wave field effect transistor in a time domain terahertz (THz) spectroscopy setup is presented. We demonstrate that High Electron Mobility Transistors (HEMTs) is an efficient device for detection of pulsed terahertz electric fields generated with a femtosecond laser oscillator. The response was observed in the frequency range of about 1 THz, far above the cutoff frequency of the transistors at room temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel and that significant improvement of the active device can be achieved by increasing the drain current. The two-dimensional terahertz imaging applications clearly demonstrate that plasma wave nanometer HEMT should be employed as efficient future detectors in a matrix configuration. |
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Keywords: | Plasma wave HEMT detectors Imaging systems Far infrared or terahertz Ultrafast lasers |
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