| 部分耗尽SOI体接触nMOS器件的关态击穿特性 |
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| 引用本文： | 吴峻峰,钟兴华,李多力,康晓辉,邵红旭,杨建军,海潮和,韩郑生.部分耗尽SOI体接触nMOS器件的关态击穿特性[J].半导体学报,2005,26(4):656-661. |
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| 作者姓名： | 吴峻峰 钟兴华 李多力 康晓辉 邵红旭 杨建军 海潮和 韩郑生 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 分别采用具有硅化物和不具有硅化物的SOI工艺制成了部分耗尽SOI体接触nMOS晶体管.在体接触浮空和接地的条件下测量了器件的关态击穿特性.通过使用二维工艺器件模拟,并测量漏体结的击穿特性,详细讨论和分析了所制成器件击穿特性的差异和击穿机制.在此基础上,提出了一个提高PD-SOI体接触nMOS击穿特性的方法.
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| 关 键 词： | 部分耗尽SOI 体接触 击穿 硅化物 H-gate |
Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices |
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| Wu Junfeng,Zhong Xinghua,Li Duoli,Kang Xiaohui,Shao Hongxu,YANG Jianjun,Hai Chaohe,Han Zhengsheng.Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices[J].Chinese Journal of Semiconductors,2005,26(4):656-661. |
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| Authors: | Wu Junfeng Zhong Xinghua Li Duoli Kang Xiaohui Shao Hongxu YANG Jianjun Hai Chaohe Han Zhengsheng |
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| Abstract: | Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technolo gy, respectively. Off-state breakdown characteristics of these devices are presented with and without body contact, respectively. By means of two-dimension(2D) device simulation and measuring junction breakdown of the drain and the body, the difference and limitation of the breakdown characteristics of devices with two technologies are analyzed and explained in details. Based on this, a method is proposed to improve off-state breakdown characteristics of PDSOI nMOS devices. |
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| Keywords: | partial-depleted SOI body-tied breakdown silicide H-gate |
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