| 硅基1.55μm共振腔增强型探测器 |
| |
| 引用本文： | 毛容伟,左玉华,李传波,成步文,滕学公,罗丽萍,张合顺,于金中,王启明.硅基1.55μm共振腔增强型探测器[J].半导体学报,2005,26(2). |
| |
| 作者姓名： | 毛容伟 左玉华 李传波 成步文 滕学公 罗丽萍 张合顺 于金中 王启明 |
| |
| 作者单位： | 1. 中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083
2. 北京化工厂,北京,100022 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金，国家高技术研究发展计划(863计划) |
| |
| 摘 要： | 报道了一种利用硅乳胶作为键合介质的新型键合技术.高反射率的SiO2/Si反射镜预先用PECVD系统生长在硅片上,然后键合到InGaAs有源区上,键合温度为350℃,无需特殊表面处理,反射镜的反射率可以高达99.9%以上,制作工艺简单,价格便宜.并获得硅基峰值响应波长为1.54μm,量子效率达22.6%的窄带响应,峰值半高宽为27nm.本方法有望用于工业生产.
|
| 关 键 词： | RCE探测器 高量子效率 直接键合 键合介质 InGaAs |
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors |
| |
| Mao Rongwei,Zuo Yuhua,Li Chuanbo,Cheng Buwen,Teng Xuegong,Luo Liping,Zhang Heshun,Yu Jinzhong,Wang Qiming.Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J].Chinese Journal of Semiconductors,2005,26(2). |
| |
| Authors: | Mao Rongwei Zuo Yuhua Li Chuanbo Cheng Buwen Teng Xuegong Luo Liping Zhang Heshun Yu Jinzhong Wang Qiming |
| |
| Abstract: | A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes. |
| |
| Keywords: | RCE photodetector high quantum efficiency direct bonding bonding medium InGaAs |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
| 点击此处可从《半导体学报》下载免费的PDF全文 |
|
