Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions |
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Authors: | D Aurélio L Torres |
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Institution: | a Departamento de Física Aplicada. Universidad de Salamanca, Plaza de la Merced s/n 37008 Salamanca, Spain b Dipartimento di Fisica della Materia e Ingegneria Elettronica, University of Messina, Salaita Sperone 31, 98166 Messina, Italy |
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Abstract: | This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes. |
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Keywords: | Magnetic tunnel junction Spin-torque Micromagnetic model Spintronics MRAM |
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