X-ray diffraction study of the effect of neutron irradiation on the defect formation in silicon crystals grown by the Czochralski method and annealed at high temperatures

The effect of x-ray scattering by neutron-irradiated and reference (unirradiated) silicon crystals grown by the Czochralski method and annealed at temperatures of 850–1050°C on the defect formation is comparatively investigated using triple-crystal x-ray diffractometry. The sizes and concentrations of clusters composed of point defects and dislocation loops formed during decomposition of an oxygen-containing solid solution and subsequent clusterization of the point defects are calculated.