Effect of the coherence of free electron-hole pairs on excitonic absorption in GaAs/AlGaAs superlattices |
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Authors: | K. L. Litvinenko V. G. Lysenko J. M. Hvam |
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Affiliation: | (1) Institute of Problems of the Technology of Microelectronics and Ultrapure, Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;(2) Mikroelektronik Centrel, DTU, DK-2800 Lyngby, Denmark |
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Abstract: | The effect of photoexcited free carriers on the absorption spectra dynamics of GaAs/AlxGa1−x As superlattices is investigated experimentally by the pump-probe method. A sharp change in the shift of the excitonic resonance energy from the low-to the high-energy direction is found to occur at the moment that the electromagnetic radiation of the pump and probe beams overlap in the case of band-band excitation. This phenomenon is explained in a model of scattering of high-energy electron-hole pairs. The dephasing time of free high-energy particles is experimentally estimated to be several tens of femtoseconds. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 1, 62–67 (10 January 1998) |
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