First principle study on the electronic structure of fluorine-doped SnO2

The electronic properties of fluorine-doped SnO₂ films were calculated using the plane-wave-based pseudopotential method based on the density functional theory within the local density approximation. The calculated band structure and density of states show that the band gap of SnO₂ narrows due to the presence of the F impurity energy levels in the bottom of the conduction band. The energy of the valence electrons is reduced as the optical absorption edge shifts towards a higher frequency. The charge density and effective masses of carriers of fluorine-doped SnO₂ were also calculated.