Fast dimer diffusion near the island: A computational study |
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| Authors: | R.Z. Huang V.S. Stepanyuk |
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| Affiliation: | 1. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, PR China;2. Hunan Key Laboratory for Computation and Simulation in Science and Engineering, Faculty of Mathematics and Computational Science, Xiangtan University, Hunan 411105, PR China;3. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China;1. Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;2. China Technology Center, GE Global Research, Shanghai 201203, China |
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| Abstract: | Performing atomic scale simulations, we study the diffusion of small Co clusters on Cu(111) surface in the presence of Co islands. It is revealed that mesoscopic relaxations at the island-substrate interface play an important role during the diffusion events of the clusters. The diffusion barrier of small Co clusters near the islands increases with increasing cluster size. Especially, we find that dimer diffusion near the island with B step is as fast as monomer’s, which might be responsible for the formation of dendritic shaped islands at low temperature. |
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