Magneto-ballistic transport through micro-structured junctions on a curved two-dimensional electron gas |
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| Authors: | G Papp FM Peeters |
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| Institution: | 1. Department of Theoretical Physics, University of Szeged, Tisza L. krt. 84-86, H-6720 Szeged, Hungary;2. Institute of Physics, University of West Hungary, Bajcsy Zs. út 4-6, H- 9400 Sopron, Hungary;3. Departement Fysica, Universiteit Antwerpen (CGB), Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;1. Department of Chemistry, Science and Research Campus, Islamic Azad University, Poonak, Tehran, Iran;2. Department of Chemistry, Sharif University of Technology, Tehran, Iran;3. Department of Chemistry, Ghaemshahr Branch, Islamic Azad University, Mazandaran, Iran;1. Nanyang Technological University, School of Electrical and Electronic Engineering, Division of Microelectronics, Block S2.1, Nanyang Avenue, Singapore 639798, Republic of Singapore;2. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, Republic of Singapore;1. College of Physics, Hebei Normal University, Shijiazhuang 050016, China;2. Hebei Advanced Thin Films Laboratory, Shijiazhuang 050016, China;1. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, 440 West Brooks, Norman, OK 73019-2061, USA;2. Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA;1. Vision Lab, Department of Physics, University of Antwerp, Universiteitsplein 1, B-2610 Wilrijk, Belgium;2. Leiden Institute of Advanced Computer Science, University of Leiden, Niels Bohrweg 1, 2333 CA Leiden, The Netherlands |
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| Abstract: | We investigate theoretically the ballistic transport in a two-dimensional electron gas, which is rolled up as a tube and is micro-structured into a Hall bar. A uniform magnetic field applied to such a curved surface results in a non-uniform perpendicular magnetic field. The bend resistances become asymmetric with respect to the orientation of the magnetic field due to the varying magnetic field along the junction. The resistance asymmetry is strongly affected by corrugation due to the varying mobility along different crystallographic directions. We compare our results with a recent transport measurement. |
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