Preparation of Nb doped PZT film by RF sputtering |
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| Authors: | Takamichi Fujii Yoshikazu Hishinuma Tsuyoshi Mita Takami Arakawa |
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| Institution: | 1. Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología-Universidad Autónoma de San Luis Potosí, Av. Sierra Leona No.550,Col. Lomas 2a. sección, C.P. 78210 San Luis Potosí, SLP, México;2. Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México;3. Facultad de Física/IMRE, San Lázaro y L, Universidad de la Habana, C.P. 10400 Habana, Cuba;4. Instituto Politécnico Nacional – ESFM, IPN, Av. IPN S/N, Edif. 9, U.P. Zacatenco, Col. San Pedro Zacatenco, C.P. 07738 Mexico, DF, México;5. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apdo. Postal 16, C.P. 22800 Ensenada, BC, México;1. Department of Chemistry, Pukyong National University, 45, Yongso-ro, Nam-Gu, Busan, 48513, South Korea;2. Nano/Bio Interface Center, University of Pennsylvania, Philadelphia, PA, 19104 6272, USA;3. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 6396, USA;4. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104 6272, USA;1. Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA;2. DGIST-ETH Microrobotics Research Center, Daegu-Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea;1. CSIR-National Physical Laboratory, Centre for Nanoscale Science, New Delhi 110012, India;2. CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032, India |
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| Abstract: | Undoped lead zirconate titanate (PZT) and Nb doped lead zirconate titanate (PNZT) films formed on an Ir/Ti/SiO2/Si substrate using an RF magnetron sputtering method were studied in detail. Films of about 3–4 μm thickness were deposited at a substrate temperature of 525 °C. X-ray diffraction measurement (XRD) shows that the obtained PZT and PNZT films are both strongly uniaxially oriented in the (100) direction of the perovskite structure, and TEM observation shows that the films have columnar structures. The addition of Nb results in changes of film electrical characteristics, particularly dielectric constant and hysteresis characteristics. Sputtered PNZT films (Nb 13 at.%) formed on silicon diaphragm structures generate 2 times more deflections than undoped PZT film formed on the same structure, thus demonstrating a superior piezoelectric performance. A sputtering method to directly form a PNZT film with high piezoelectric constant on a substrate at low temperature via electrodes finds a wide potential use in MEMS applications. |
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