Planar chalcogenide quarter wave stack filter for near-infrared |
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Authors: | T Kohoutek J Orava J Prikryl T Wagner Mil Vlcek P Knotek M Frumar |
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Institution: | 1. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legion’s sq. 565, 53210 Pardubice, Czech Republic;2. Joint Laboratory of Solid State Chemistry of the Institute of Macromolecular Chemistry AS CR v.v.i. and University of Pardubice, Studentska 84, 53210 Pardubice, Czech Republic |
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Abstract: | A quarter wave stack dielectric filter with normal incidence pass band in near-infrared range was prepared from alternating high index contrast chalcogenide films. The prepared filter consists of a low index Ge–S spacer layer surrounded by two 4.0 pairs Sb–Se/Ge–S reflectors. Films were deposited using flash and thermal evaporation techniques. After deposition, the filter was annealed at 165 °C for 1 h. Optical reflectivity measurements of the annealed filter revealed a ~63% normal incidence passband near 1540 nm. An ~80% passband was recorded after illumination of the filter by the light with s-polarization at angles 35°, 45° and 55°, while its position shifted to 1451, 1476 and 1505 nm, respectively. A ~75% passband appeared near 1436, 1467 and 1498 nm in response to illumination of the filter by the light with p-polarization at the same angles. The angular dependence of the reflectivity of dielectric multilayer can be exploited for filtering of incident light. |
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