Site spectroscopy of Hf doping in Hf-doped LiNbO3 crystals |
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| Authors: | R Hammoum MD Fontana M Gilliot P Bourson EP Kokanyan |
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| Institution: | 1. Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, Université Paul Verlaine de Metz and Supélec, 2 rue E. Belin, 57070 Metz, France;2. Institute for Physical Research, National Academy of Sciences of Armenia, 0203 Ashtarak-2, Armenia;1. Engineering Physics Laboratory, Tiaret University, 14000 Tiaret, Algeria;2. Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara, Algeria;3. Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar, Pakistan;4. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;1. Institute of Photonic Information Technology, School of Mathematics and Physics, QingDao University of Science & Technology, QingDao 266061, China;2. Key Laboratory for Laser plasmas and Department of Physics, Shanghai Jiaotong University, Shanghai 200240, China;3. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;4. College of Physics, Qingdao University, Qingdao 266071, China;1. National University of Water and Environmental Engineering, 11, Soborna St., 33028 Rivne, Ukraine;2. National University, 2, Kotsiubynskogo St., 58012 Chernivtsi, Ukraine;1. Computer Science Department, Federal University of Lavras, Lavras, MG, Brazil;2. Department of Informatics Engineering, University of Coimbra, Coimbra, Portugal |
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| Abstract: | By means of Raman scattering spectroscopy we determine the site location occupied by Hf ions in photorefractive damage resistant Hf-doped LiNbO3. At room temperature the two lowest frequency phonons are related to sites B (Nb) and A (Li), and are used to directly probe the dopant ion. For the low concentration range, the Hf ions go into the sites A whereas, for high concentration, Hf ions occupy both sites A and B. Results are compared with data obtained for pure congruent and stoichiometric crystals, and the proposed mechanism of incorporation of Hf ions in the LiNbO3 lattice explains the threshold in the behaviour of photorefractive properties. |
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