The effect of temperature on absorption in end-pumped Yb:YAG thin disk lasers |
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| Authors: | Seyfollah Toroghi Ahmad Khayat Jafari Ala Hashemi Golpayegani |
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| Affiliation: | 1. Photonic Research Centre, University of Malaya, 50603 Kuala Lumpur, Malaysia;2. Center of Research in Optoelectronics, Communication and Control Systems, School of Engineering, Bangkok University, Pathum Thani 12120, Thailand;3. Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;1. JINR, 141980 Dubna, Russia;2. CERN, CH-1211 Geneva 23, Switzerland;3. EPFL, CH-1015 Lausanne, Switzerland;1. Department of Applied Physics, East China Jiaotong University, Nanchang 330013, China;2. Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom;1. Key Laboratory of Transparent and Opto-functional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Science and Technology on Solid-State Lasers Laboratory, North China Research Institute of Electro-Optics, Beijing 100015, China |
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| Abstract: | In this paper, the dependence of the absorbed power on the temperature in an end-pumped CW quasi-three-level Yb:YAG thin disk laser is calculated. Here, we have used the temperature-dependent form of the Boltzmann occupation factors, absorption cross-section and thermal conductivity of the Yb:YAG crystal. A Monte Carlo ray tracing code and a 2D finite element analysis (FEA) with the ANSYS package have been used to calculate the absorbed power and the temperature distribution inside the Yb:YAG thin disk laser, respectively. According to the model, the temperature-dependent absorbed power turns out to be 18% less than the temperature-independent absorbed power in the top center of the Yb:YAG thin disk laser for used parameters. |
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