The microstructures and the electrical and optical properties of ZnO:N films prepared by thermal oxidation of Zn3N2 precursor |
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| Authors: | CW Zou RQ Chen W Gao |
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| Institution: | 1. Department of Electrical Engineering and Computer Science, The University of Toledo, 2801 West Bancroft Street, Toledo, OH 43606, USA;2. Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606, USA;3. Department of Mechanical, Industrial, and Manufacturing Engineering, The University of Toledo, Toledo, OH 43606, USA |
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| Abstract: | Samples of p-type ZnO:N films were prepared on glass substrates by thermal oxidation of Zn3N2 precursor, which was produced by reactive magnetron sputtering with a metallic zinc target in Ar/N2 working gas. The microstructures and the electrical and optical properties of the samples were systematically investigated as a function of the annealing temperature. The results indicate that the annealing temperature has strong effects on the conductivity and photoluminescence (PL) properties of the obtained ZnO:N films. With an annealing temperature of 500 °C in oxygen flux, ZnO:N samples show the best p-type characteristics. The doping mechanism and the doping efficiency are briefly discussed based on the experimental results. |
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