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Anionic and cationic substitution in ZnO
Authors:H. von Wenckstern  H. Schmidt  M. Brandt  A. Lajn  R. Pickenhain  M. Lorenz  M. Grundmann  D.M. Hofmann  A. Polity  B.K. Meyer  H. Saal  M. Binnewies  A. Börger  K.-D. Becker  V.A. Tikhomirov  K. Jug
Affiliation:1. Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany;2. I.Physikalisches Institut JLU-Giessen, Heinrich-Buff-Ring 16, D-35392 Gieβen, Germany;3. Institut für Anorganische Chemie, Leibniz Universität Hannover, Callinstr. 9, 30167 Hannover, Germany;4. Institut für Physikalische Chemie, Technische Universität Braunschweig, Hans-Sommer-Str. 10, 38106 Braunschweig, Germany;5. Theoretische Chemie, Leibniz Universität Hannover, Callinstr. 3A, 30167 Hannover, Germany;1. Laboratoire de Physique Fondamentale et Appliquée (LPFA), Faculté des Sciences Ain Chock, Université Hassan II, B.P. 5366 Mâarif, Casablanca, Maroc;2. Laboratoire de Physique des Matériaux, Micro-électronique, Automatique et Thermique (LPMMAT). Faculté des Sciences Ain Chock, Université Hassan II, B.P. 5366 Mâarif, Casablanca, Maroc;3. Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble, France;1. Materials and Renewable Energies Laboratory, Ibn Zohr University, Faculty of Sciences, BP 8106 Dakhla, Agadir, Morocco;2. Optoelectronics and Physical Chemistry of Materiaux Laboratory, Ibn Tofail University, Faculty of Sciences, BP 133 14000 Kenitra, Morocco;3. Materials and Valorizations of Natural Resources Laboratory, Abdelmalek Essaadi University, Tanger, Morocco;4. Hassan II University, Faculty of Science and Technology Mohammedia, Morocco;1. College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, China;2. College of Science, Anhui University of Science and Technology, Huainan 232001, China;3. The Key Laboratory of Electronic Thin Film and Integrated devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract:In this contribution we review the impact of anionic and cationic substitutions on the electronic properties of bulk ZnO crystals, thin films and ZnO powders. p-type doping is discussed with focus on the anionic substitution of oxygen by nitrogen or phosphorous. n-type doping is exemplarily reviewed for substitution of Zn by group III elements. The impact of isoelectronic substitution of zinc (with Cd or Mg) or of oxygen (with S, Se, Te) on the band gap are also discussed for the respective ternary alloy. The substitution of Zn by the transition metal Mn introduces several electronic levels in the band gap which significantly alter the absorption and emission properties. Further, devices based on substitutional effects in ZnO are reviewed: Schottky diodes (unipolar device) and pn-diodes (bipolar device).
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