Metastability of defects,potential fluctuations,and percolation transition in GaAs |
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| Authors: | D Kabiraj Subhasis Ghosh |
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| Institution: | 1. Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, Moscow 121205, Russia;2. Institute of Semiconductor Physics SB RAS, Acad. Lavrent''eva St. 13, Novosibirsk 630090, Russia;3. Novosibirsk State University, Pirogova St. 2, Novosibirsk 630090, Russia;1. Department of Gastroenterology and Hepatology, The Fourth Hospital of Hebei Medical University, Shijiazhuang, PR China;2. Department of Pathology, The Fourth Hospital of Hebei Medical University, Shijiazhuang, PR China;3. Department of Gynaecology Ultrasound, The Fourth Hospital of Hebei Medical University, Shijiazhuang, PR China |
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| Abstract: | Potential fluctuations due to donor–acceptor compensation have been used to observe localization–delocalization transition in semi-insulating GaAs. Photoinduced transients, resulting from relaxation of stored charges in potential valleys, have two components. The long-lived power law decay at low temperature signifies a microscopically inhomogeneous disordered phase, and single exponential decay at a higher temperature signifies a homogeneous ordered phase. Temperature dependence of steady state photocurrent and kinetics of photocurrent decay suggest percolation as a possible mechanism for photoinduced transition in semi-insulating GaAs. |
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