Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy |
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| Authors: | B Liu J Gao KM Wu C Liu |
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| Institution: | 1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, PR China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, PR China;1. IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, EN10, 2696-953 Sacavém, Portugal;2. Centro de Física Nuclear da Universidade de Lisboa, 1649-003 Lisboa, Portugal;3. Departamento de Física e i3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal;1. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal;2. Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal;3. Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland;4. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany;1. L.N. Gumilyov Eurasian National University, Astana, Kazakhstan;2. The Institute of Nuclear Physics of Republic of Kazakhstan, Astana, Kazakhstan;3. School of Engineering, Nazarbayev University, Astana, Kazakhstan;4. Ural Federal University Named After the First President of Russia B.N. Yeltsin, Yekaterinburg, Russia;1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece;2. Institut Jean Lamour, UMR 7198, CNRS, Université de Lorraine, Boulevard des Aiguillettes, B.P. 239, 54506 Vand?uvre-lès-Nancy Cedex, France;1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;2. Leibniz Institute for Crystal growth, Max-Born-Str. 2, 12489 Berlin, Germany;3. Evatec AG, Hauptstr. 1a, 9477 Trübbach, Switzerland |
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| Abstract: | AlN films were grown at 785 °C on (0001) sapphire substrates by radio-frequency assisted molecular beam epitaxy. Post-growth rapid thermal annealing (RTA) was carried out from 900 to 1200 °C for 10 s in flowing N2. The morphological and structural properties of the AlN epilayers before and after the RTA were studied by atomic force microscopy, x-ray diffraction and transmission electron microscopy. It is found that the threading dislocations can be decreased to an order of magnitude by using an interlayer growth method. The surface roughness (RMS) of the AlN thin films becomes larger with the increase of annealing temperature. The full width at half maximum of AlN (0002) rocking curve reaches its minimum after the RTA at 1000 °C. |
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