Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations |
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| Authors: | Yan Liu Jiqing Wang Huaizhong Xing Naiyun Tang Bin Lv Huibing Mao Qiang Zhao Yong Zhang Ziqiang Zhu |
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| Institution: | 1. Department of Electronic Science and Engineering, East China Normal University, Zhongshan North Road 3663, Shanghai 200062, China;2. Department of Applied Physics, Donghua University, Ren Min Road 2999, Songjiang District, Shanghai 201620, China;3. Shanghai University of Electric Power, Pingliang Road 2103, Shanghai 200090, China;1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;3. State Key Laboratory of Geodesy and Earth''s Dynamics, Institute of Geodesy and Geophysics, Chinese Academy of Sciences, Wuhan 430077, China;1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;2. Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China |
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| Abstract: | The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure. |
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