Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate |
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| Authors: | JP Kar M Kumar JH Choi SN Das SY Choi JM Myoung |
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| Institution: | 1. Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC;2. Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC;3. Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC;4. Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor, Malaysia |
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| Abstract: | In this paper, the formation of a p–n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are -axis oriented. The formation of p–n ZnO homojunction is verified by current–voltage measurements. Typical diode behavior and photoconductivity were observed in both designs. |
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