非晶铟镓锌氧薄膜晶体管钼/铜源漏电极的研究

针对非晶铟镓锌氧薄膜晶体管（a-IGZO TFT）的钼/铜源漏电极开展研究。实验证明，单层Mo源漏电极与栅绝缘层之间的粘附性好、表面粗糙度较小、电阻率较大，而单层Cu源漏电极与栅绝缘层之间的结合性差且Cu原子扩散问题严重、表面粗糙度较大、电阻率较小。为了实现优势互补，我们设计了双层Mo（20 nm）/Cu（80 nm）源漏电极，并采用优化工艺制备了包含该电极结构的a-IGZO TFT。器件具有良好的电学特性，场效应迁移率为 8.33 cm²·V^-1·s^-1， 阈值电压为6.0 V，亚阈值摆幅为2.0 V/dec，开关比为 1.3×10⁷，证明了双层Mo/Cu源漏电极的可行性和实用性。

Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Mo/Cu source/drain(S/D) electrodes for amorphous InGaZnO thin film transistors(a-IGZO TFTs) were investigated. The experimental data indicate that the single-layer Mo electrodes have good adhesion to gate insulators, smaller surface roughness, and higher resistivity, whereas the single-layer Cu electrodes possess bad adhesion to gate insulators as well as the serious Cu atom diffusion problems, larger surface roughness, and lower resistivity. To complement each other's advantages, the double-layer Mo/Cu electrodes as well as the corresponding a-IGZO TFTs are designed and fabricated, which exhibits good performance parameters(field effect mobility of 8.33 cm²·V^-1·s^-1, threshold voltage of 6.0 V, subthreshold swing of 2.0 V/dec, and on-off current ratio of 1.3×10⁷). This proved the feasibility and practicability of the double-layer Mo/Cu source/drain electrodes for the mass productions of a-IGZO TFTs.