首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Ion recognition properties of poly[Cu(3-MeOsalpd)] films
Authors:I Kiersztyn  L Neto  A Carneiro  J Tedim  C Freire  A R Hillman
Institution:1. REQUIMTE/Departamento de Química e Bioquímica, Faculdade de Ciências, Universidade do Porto, Rua do Campo Alegre, s/n, 4169-007, Porto, Portugal
4. Centre for Nanotechnology and Smart Materials, 4760-034 Vila, Nova de Famalic?o, Portugal
2. CICECO, Departamento de Engenharia Ceramica e do Vidro, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193, Aveiro, Portugal
3. Department of Chemistry, University of Leicester, Leicester, LE1 7RH, UK
Abstract:PolyCu(3-MeOsalpd)] films with good physical, chemical and electrochemical stability may be potentiodynamically electrodeposited with high deposition efficiency from acetonitrile solutions of the monomer. Comparative coulometric assays with the Ni-based analogue show that the metal in the salen motif does play a role in the electronic structure of the polymer, but that the electroactive response is ligand (not metal) based. The dynamics of redox switching are ultimately limited by coupled electron/counter ion diffusion, but this process is sufficiently rapid that it influences the voltammetric response only for thick films (Γ >420?nmol?cm?2) at high scan rates. Redox cycling in monomer-free electrolyte shows a voltammetric signature that responds, via interaction with the pseudo-crown ether receptor sites, to the presence of Li+, K+, Mg2+ and Ba2+ ions in solution. The most prominent change is associated with the first anodic peak in the i-E signature. For each of the metal ions considered, this peak potential responds logarithmically to concentration in a manner that varies with individual complexed cation and film thickness and to an extent greater than predicted by the Nernst equation. The film characteristics offer some analytical promise, including a trade-off between sensitivity and dynamic range and signal amplification, possibly due to supramolecular effects.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号