Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by SiN atomic and cluster ions (N = 1, 5, and 60) using classical molecular dynamics

The features of the cascade of atomic collisions, the spatial distribution of dopes, and primary radiation damage in a near-surface region of cubic silicon carbide under bombardment by Si _N ions and clusters (N = 1, 5, and 60) in the case of the same energy per one atom of the particle-projectile (200 and 1000 eV/atom) are studied in this paper. The study is carried out using classical molecular dynamics. As a result, several features of the low-energy implantation of polyatomic clusters in SiC(111) are revealed, namely, a relatively weak effect of the size of the implanted cluster on the distribution of ranges of incorporated atoms, a low degree of nonlinear effects at the cascade and postcascade stages, and formation of amorphous regions in the target during cluster implantation.