大型仪器功能开发(151~159)瓦里安300XP离子注入机改造及功能开发

在完全掌握瓦里安300XP离子注入机各部件的工作原理后, 将原离子源供电系统中500 W电流源和450 W起弧电源升级为1 500 W电流源和1 500 W起弧电源, 并集成到当前系统中.将现有不稳定的气体流量、离子源电源、分析器、源磁场和吸极高压塑料光纤隔离控制线路, 升级成多通道光纤通讯光端机隔离控制系统.将一个10 cm进样终端改造成15 cm的样品卡盘, 并开发了一套独立控制剂量监测系统.改造后, 硼最大束流超过150 μA, 且可调节. 15 cm圆片的片内及片间电阻不均匀性小于3.5%.利用大束流硼离子注入制备浓硼掺杂单晶硅结构层, 应用到微电子机械系统压力传感器、热电器件以及纳米谐振子器件中.

Reformation and Function Development of Varian 300XP Ion Implanter

After having a full understanding of the working principles of every parts of the Varian 300XP ion implanter, the 500 W current source and 450 W arcing power supply were upgraded to the 1 500 W current source and 1 500 W arcing power supply, and integrated into the original ion source power supply system. The existing unstable gas flow, ion source power supply, analyzer, source magnetic field and high voltage plastic optical fiber isolation control circuit were upgraded to the multi-channel optical fiber isolation communication system. A 10 cm sample injection terminal was transformed into a 15 cm sample chuck, and an independent dose monitoring system was developed. After reconstruction, the maximum beam current of boron was more than 150 μA and adjustable. The inhomogeneity of resistance between and in the 15 cm wafers was less than 3.5%. Boron doped monocrystal silicon structure layer was prepared by the strong beam current boron ion implantation and applied to the micro-electro-mechanical systems pressure sensor, thermoelectric device and nano-resonator device.